| PART |
Description |
Maker |
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| PX6A03 PX6A04 PX6A05 PX6A07 PX6A01 PX6A02 PX6A06 |
RECTIFIER DIODE,1.2KV V(RRM),DO-5
6 AMP PLASTIC SILICON RECTIFIER
|
FUJI[Fuji Electric]
|
| C4D05120A |
Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier
|
Cree, Inc
|
| C4D15120A |
Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier
|
Cree, Inc
|
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
| BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration
Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
| BAS116LT1D BAS116LT3G BAS116LT1G |
Switching Diode
Switching Diod 0.2 A, 75 V, SILICON, SIGNAL DIODE, TO-236AB
|
ON Semiconductor
|
| P6MU-2415EH52 P6MU-0505EH52 P6MU-0512EH52 P6MU-120 |
Input voltage:5V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:12V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
Input voltage:5V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 15V (67mA), 5.2KV isolated 1W unregulated single output
Input voltage:12V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 5V (200mA), 5.2KV isolated 1W unregulated single output
Input voltage:24V, output voltage 12V (84mA), 5.2KV isolated 1W unregulated single output
5.2 KV ISOLATED 1W UNREGULATED SINGLE OUTPUT DIP14 5.2千伏隔震1W的未稳压单输出DIP14
|
http://
PEAK[PEAK electronics GmbH]
|
| 1N4148 |
SMALL SIGNAL SWITCHING DIODE
Fast Switching Diode
|
Chenyi Electronics
Comchip Technology
|
| Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| IRKN250-04 IRKN250-14 IRKN250-08 IRKN250-16 IRKN25 |
THYRISTOR MODULE|DOUBLER|CA|400V V(RRM)|250A I(T)
THYRISTOR MODULE|DOUBLER|CA|1.4KV V(RRM)|250A I(T)
THYRISTOR MODULE|DOUBLER|CA|800V V(RRM)|250A I(T)
THYRISTOR MODULE|DOUBLER|CA|1.6KV V(RRM)|250A I(T)
THYRISTOR MODULE|DOUBLER|CA|1.2KV V(RRM)|250A I(T)
THYRISTOR MODULE|DOUBLER|CC|1.2KV V(RRM)|170A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.2KV V(RRM)|230A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|230A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.6KV V(RRM)|230A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.4KV V(RRM)|250A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.8KV V(RRM)|230A I(T)
THYRISTOR MODULE|DOUBLER|CA|1.2KV V(RRM)|170A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|170A I(T)
晶闸管模块|倍增|加利福尼亚州| 1.6KV五（无线资源管理）| 230A章吾（翻译）
晶闸管模块|倍增|加利福尼亚州| 1.2KV五（无线资源管理）| 250A章吾（翻译）
晶闸管模块|倍增|加利福尼亚州| 1.8KV五（无线资源管理）| 230A章吾（翻译）
晶闸管模块|倍增|加利福尼亚州| 1.4KV五（无线资源管理）| 250A章吾（翻译）
晶闸管模块|倍增|加利福尼亚州| 1.4KV五（无线资源管理）| 230A章吾（翻译）
THYRISTOR MODULE|SCR|DUAL|CA|1.6KV V(RRM)|230A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.6KV五（无线资源管理）| 230A章吾（翻译）
THYRISTOR MODULE|SCR|DUAL|CA|1.4KV V(RRM)|230A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.4KV五（无线资源管理）| 230A章吾（翻译）
THYRISTOR MODULE|SCR|DUAL|CA|1.8KV V(RRM)|230A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.8KV五（无线资源管理）| 230A章吾（翻译）
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|230A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.2KV五（无线资源管理）| 230A章吾（翻译）
400V 250A Doubler Circuit Positive Phase Control Thyristor/Diode in a MAGN-A-Pak package 400V 250A章倍增电路积极相位控制晶闸二极管的磁共 à - Pak封装
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|250A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 400V五（无线资源管理）| 250A章吾（翻译）
400V 170A Doubler Circuit Positive Phase Control Thyristor/Diode in a MAGN-A-Pak package 400V 170A章倍增电路积极相位控制晶闸二极管的磁共 à - Pak封装
|
Monolithic Power Systems, Inc.
Cooper Bussmann, Inc.
Illinois Capacitor, Inc.
Vishay Intertechnology, Inc.
|
